Highlight differences

Compare 2 Intel^® Products

Export comparison

Intel® Optane™ Memory H10 with Solid State Storage (Intel® Optane™ Memory 32GB + Intel® QLC 3D NAND SSD 512GB, M.2 80mm PCIe 3.0)

Intel® Optane™ Memory H20 with Solid State Storage (32 GB + 512 GB, M.2 80mm PCIe 3.0, 3D XPoint™, QLC)

Essentials

<tr class = recommendedCustomerPrice><td class="row-title sticky-column"><div class="row-text">Recommended Customer Price</div></td></tr>


Product Collection
Capacity
Marketing Status
Launch Date
Use Conditions


Product Collection	Intel® Optane™ Memory H10 with Solid State Storage	Intel® Optane™ Memory H20 with Solid State Storage
Capacity	512 GB	512 GB
Marketing Status	Discontinued	Discontinued
Launch Date	Q2'19	Q2'21
Use Conditions	PC/Client/Tablet	PC/Client/Tablet, Workstation
Recommended Customer Price


Product Collection	Intel® Optane™ Memory H10 with Solid State Storage Intel® Optane™ Memory H20 with Solid State Storage
Capacity	512 GB 512 GB
Marketing Status	Discontinued Discontinued
Launch Date	Q2'19 Q2'21
Use Conditions	PC/Client/Tablet PC/Client/Tablet, Workstation
Recommended Customer Price

Performance Specifications


Sequential Bandwidth - 100% Read (up to)
Sequential Bandwidth - 100% Write (up to)
Random Read (8GB Span) (up to)
Random Write (8GB Span) (up to)
Power - Active
Power - Idle


Sequential Bandwidth - 100% Read (up to)	2300 MB/s	3400 MB/s
Sequential Bandwidth - 100% Write (up to)	1300 MB/s	2000 MB/s
Random Read (8GB Span) (up to)	320000 IOPS (4K Blocks)	380000 IOPS (4K Blocks)
Random Write (8GB Span) (up to)	250000 IOPS (4K Blocks)	280000 IOPS (4K Blocks)
Power - Active	5.8W	170mW
Power - Idle	L1.2 : <13mW	35mW


Sequential Bandwidth - 100% Read (up to)	2300 MB/s 3400 MB/s
Sequential Bandwidth - 100% Write (up to)	1300 MB/s 2000 MB/s
Random Read (8GB Span) (up to)	320000 IOPS (4K Blocks) 380000 IOPS (4K Blocks)
Random Write (8GB Span) (up to)	250000 IOPS (4K Blocks) 280000 IOPS (4K Blocks)
Power - Active	5.8W 170mW
Power - Idle	L1.2 : <13mW 35mW

Reliability


Vibration - Operating
Vibration - Non-Operating
Shock (Operating and Non-Operating)
Operating Temperature Range
Max Operating Temperature
Minimum Operating Temperature
Endurance Rating (Lifetime Writes)
Mean Time Between Failures (MTBF)
Uncorrectable Bit Error Rate (UBER)
Warranty Period


Vibration - Operating	2.17 GRMS (5-700 Hz) Max	2.17 GRMS (5-700Hz)
Vibration - Non-Operating	3.13 GRMS (5-800 Hz) Max	3.13GRMS (5-800Hz)
Shock (Operating and Non-Operating)	1000 G / 0.5 ms and 1500 G / 0.5 ms	1500 G/0.5ms
Operating Temperature Range	0°C to 70°C	0°C to 70°C
Max Operating Temperature	70 °C	70 °C
Minimum Operating Temperature	0 °C	0 °C
Endurance Rating (Lifetime Writes)	150 TBW	185 TBW
Mean Time Between Failures (MTBF)	1.6 Million Hours	= 1.6 million hours
Uncorrectable Bit Error Rate (UBER)	< 1 sector per 10^15 bits read	< 1 sector per 10^15 bits read
Warranty Period	5 yrs	5 yrs


Vibration - Operating	2.17 GRMS (5-700 Hz) Max 2.17 GRMS (5-700Hz)
Vibration - Non-Operating	3.13 GRMS (5-800 Hz) Max 3.13GRMS (5-800Hz)
Shock (Operating and Non-Operating)	1000 G / 0.5 ms and 1500 G / 0.5 ms 1500 G/0.5ms
Operating Temperature Range	0°C to 70°C 0°C to 70°C
Max Operating Temperature	70 °C 70 °C
Minimum Operating Temperature	0 °C 0 °C
Endurance Rating (Lifetime Writes)	150 TBW 185 TBW
Mean Time Between Failures (MTBF)	1.6 Million Hours = 1.6 million hours
Uncorrectable Bit Error Rate (UBER)	< 1 sector per 10^15 bits read < 1 sector per 10^15 bits read
Warranty Period	5 yrs 5 yrs

Supplemental Information


Product Brief
Additional Information
Description


Product Brief	View now
Additional Information	View now
Description	Introducing the new Intel® Optane™ Memory H10 with Solid State Storage which combines two breakthrough technologies, Low-latency Intel® Optane™ technology and high-density Intel® QLC 3D NAND in a single M.2 2280 form factor.	Premium storage solution featuring Intel Optane Memory Technology and 3rd Gen Intel 3D QLC NAND technology on a single M.2 form factor Drive


Product Brief	View now
Additional Information	View now
Description	Introducing the new Intel® Optane™ Memory H10 with Solid State Storage which combines two breakthrough technologies, Low-latency Intel® Optane™ technology and high-density Intel® QLC 3D NAND in a single M.2 2280 form factor. Premium storage solution featuring Intel Optane Memory Technology and 3rd Gen Intel 3D QLC NAND technology on a single M.2 form factor Drive

Package Specifications


Weight
Form Factor
Interface


Weight	Less than 10 grams	<10 grams
Form Factor	M.2 22 x 80mm	M.2 22 x 80mm
Interface	PCIe 3.0 x4, NVMe	PCIe 3.0 x4, NVMe


Weight	Less than 10 grams <10 grams
Form Factor	M.2 22 x 80mm M.2 22 x 80mm
Interface	PCIe 3.0 x4, NVMe PCIe 3.0 x4, NVMe

Advanced Technologies


Enhanced Power Loss Data Protection
Temperature Monitoring and Logging
End-to-End Data Protection
Intel® Rapid Start Technology
Hardware Encryption
High Endurance Technology (HET)
Intel® Smart Response Technology
Intel® Remote Secure Erase


Enhanced Power Loss Data Protection	Yes	Yes
Temperature Monitoring and Logging	Yes	Yes
End-to-End Data Protection	Yes	No
Intel® Rapid Start Technology	Yes	Yes
Hardware Encryption		AES 256 bit
High Endurance Technology (HET)		No
Intel® Smart Response Technology		Yes
Intel® Remote Secure Erase		Yes


Enhanced Power Loss Data Protection	Yes Yes
Temperature Monitoring and Logging	Yes Yes
End-to-End Data Protection	Yes No
Intel® Rapid Start Technology	Yes Yes
Hardware Encryption	AES 256 bit
High Endurance Technology (HET)	No
Intel® Smart Response Technology	Yes
Intel® Remote Secure Erase	Yes

Compare Products 2